4 edition of Passivation studies of AlGaAs materials for high-power laser diode development found in the catalog.
Passivation studies of AlGaAs materials for high-power laser diode development
Champika H. Edirisinghe
Thesis (M.A.Sc.) -- University of Toronto, 1997.
|Series||Canadian theses = -- Thèses canadiennes|
|The Physical Object|
|Pagination||2 microfiches : negative. --|
AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers To cite this article: Kevin J Chen and Sen Huang Semicond. Sci. Technol. 28 View the article online for updates and enhancements. Related content Characterization of SiN x /AlN passivation stack with epitaxial AlN grown on. Previous studies of sulfur passivation revealed that for the case of the InGaAs material system, the air-exposed surface can be covered by a layer of mixed As, Ga, and In oxides. These native oxides associated with nonradiative recombination defect centers are removed by the sulfur treatment, reducing considerably the surface defect density in the semiconductor and resulting Cited by:
9. Advances in High-Power Quantum Cascade Lasers and Applications Arkadiy Lyakh, Richard Maulini, Alexei Tsekoun, Boris Tadjikov, and C. Kumar N. Patel Introduction MWIR Laser Design Tapered-Waveguide Geometry Silicon Carbide Submounts MWIR QCL Experimental Data LWIR QCL Design LWIR QCL Experimental Data Conclusion. CONFERENCE PROCEEDINGS Papers Presentations Journals. Advanced Photonics Journal of Applied Remote Sensing.
In this study, it is presented that the NH 4 TFSI additive in electrolyte solution greatly alleviates the passivation issue in Li–S batteries under lean electrolyte conditions. The ammonium additive enhances the dissociation of Li 2 S and largely reduces the insoluble and large Li 2 S particles in the sulfur cathodes, which facilitate the Cited by: Book chapter:III-V nitride heterojunction bipolar transistors. Huili (Grace) Xing, Chuanxin Lian* and John Simon** Advanced semiconductor materials and device research - SiC and III Nitrides, Edited by Ho-Young Cha, (*Lian, Ph.D. student of Xing’s; and **Simon, Ph.D. student of Prof. D. Jena’s).
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The passivation requirements for high-power nm and mid-power nm quantum-well (QW) ridge-waveguide (RWG) Al-containing laser diodes cleaved in air were investigated.
LAMBERT etal.: FACET-PASSIVATION PROCESSES FOR IMPROVEMENT OF SEMICONDUCTOR LASER DIODES Fig. Single-cavity-mode operation of mm-long nm µm-ridgelaser with dielectric overcoats Cited by: This reference book provides a fully integrated novel approach to the development of high-power, single-transverse mode, edge-emitting diode lasers by addressing the complementary topics of device engineering, reliability engineering and device diagnostics in the same book, and thus closes the gap in the current book literature.
Diode laser fundamentals are discussed. Champika H. Edirisinghe has written: 'Passivation studies of AlGaAs materials for high-power laser diode development' Asked in Chemistry Why Al.
development of nm laser diodes. Following this a complete laser structure with AlGaAs barrier and cladding layers was grown. A schematic layer diagram of nm laser diode structure is shown in Fig. It has a double QW configuration working as the active region of the laser diode.
Energy (eV) Fig.1 10K PL of a GaAs/AlGaAs multi QW sample. Heterostructure of a Laser Diode. Heterostructure of a laser diode. As illustrated in Figure 7, the AlGaAs Laser Diode consists of a double heterojunction formed by an undoped (or lightly p-doped) active region surrounded by higher bandgap p and n Al x Ga 1-x As cladding layers.
The surrounding cladding layers provide an energy barrier to. The paper reports for the first time a simple, economical and available way for passivating air cleaved facets of high power semiconductor lasers with Al-contained active region using a electron-beam evaporated ZnSe thin layer, which was demonstrated to be an effective way for improving the reliability of high power by: 4.
MATERIAIS SCBENCE & ENGINEERING B ELSEVIER Materials Science and Engineering B44 () Material and fabrication-related limitations to high-power operation of GaAs/AlGaAs and InGaAs/AlGaAs laser diodes A. Jaltubowicz IBM Research Division, Zurich Research, Lnborntory, CH Riischlikon, Switzerkmd Abstract This paper discusses Cited by: title = "Defect engineering for high-power nm AlGaAs laser diodes", abstract = "Defect engineering is carried out to determine optimum growth conditions for highly reliable high-power nm AlGaAs laser diodes (LDs) using deep level transient spectroscopy (DLTS).Cited by: 2.
Index-Guided High Power AlGaAs Laser Diode Description The SLDVL is a high-power, index-guided AlGaAs laser diode. Features •Low current consumption •Small astigmatism •Small package (φmm) Applications Pickup for optical discs Structure •AlGaAs quantum well structured laser diode •PIN photodiode for optical power output monitor.
GaAsBi is a suitable and very attractive material system to be used as an active layer in laser diodes (LDs). To understand the performance and the reliability of such devices and also for further laser diode improvements, the origin of noise sources should be clarified.
A detailed study of near-infrared μm wavelength GaAsBi type-I laser diodes using the low-frequency noise Cited by: 1. The passivation requirements for high-power nm and mid-power nm quantum-well (QW) ridge-waveguide (RWG) Al-containing laser diodes cleaved in air were investigated.
In a direct comparison with argon ablation, sulphation, and silicon-barrier-passivation techniques, nitrided facets with a silicon nitride barrier layer exhibited up to an order of magnitude improvement in. General Atomics has been engaged in the development of diode pumped alkali vapor lasers.
We have been examining the design space looking for designs that are both efficient and easily scalable to high powers. Computationally, we have looked at the effect of pump bandwidth on laser performance.
We have also looked at different lasing species. This reference book provides a fully integrated novel approach to the development of high-power, single-transverse mode, edge-emitting diode lasers by addressing the complementary topics of device engineering, reliability engineering and device diagnostics in the same book, and thus closes the gap in the current book : $ Lambert RW, Ayling T, Hendry AF, Carson JM, Barrow DA, McHendry S et al.
Facet-passivation processes for the improvement of Al-containing semiconductor laser diodes. Journal of Lightwave Technology. Feb;24(2)Cited by: The differential quantum efficiency for the devices with high power output exceeded 20% and the lasing wavelength was nm. AB - Semiconductor quantum wire (QWR) diode lasers incorporating a p-n junction blocking layer between buffer layers instead of Author: Tae Geun Kim, Eun Kyu Kim, Chang-Sik Son, Seong-Il Kim, Jichai Jeong, Suk-Ki Min, Si-Jong Leem, Jong.
integrated passive array . For high power infrared LDs based on AlGaAs/InGaAs SCH designs, the LOC heterostruc-ture have demonstrated multi-watt lasing capability success-fully with a low vertical divergence beam.
A marked drawback of LOC LDs is. Jérémy Michaud, Pamela del Vecchio, Laurent Béchou, David Veyrié, Mauro Bettiati, et al. Precise Facet Temperature Distribution of High- Power Laser Diodes: Unpumped Window Effect.
IEEE Photonics Technology Letters, Institute of Electrical and Electronics Engineers,27 (9), pp /LPT. halCited by: 4. Semiconductor Laser Engineering, Reliability and Diagnostics reflects the extensive expertise of the author in the diode laser field both as a top scientific researcher as well as a key developer of high-power highly reliable devices.
With invaluable practical advice, this new reference book is suited to practising researchers in diode laser. Companies that manufacture or supply high power diode laser stacks (up to 5kW Q-CW, duty factor of %, beam divergence of 10 to 40 degrees FWHM) or optical fibre delivered systems (up to W CW, to NA, to µm core fibre) include SDL, Opto Power Corp., AT&T Bell in USA, Sony.
Abstract. The study investigates laser surface hardening in the AISI steel using two different types of industrial laser: a high-power diode laser (HPDL) and a CO 2 laser, respectively. The effect of process parameters such as beam power, travel speed on structure, case depth, and microhardness was by: A channeled‐substrate‐planar AlGaAs laser has been operated to mW cw, and mW cw in single fundamental spatial mode.
A single fundamental spectral mode is observed up to about 70 mW. Beyond 70 mW there are minor increases in spectral sideband power and the far‐field pattern broadened asymmetrically with increased drive.
Both these effects are attributed to Cited by: The compound is a very hard material that has a Wurtzite crystal structure.
Its wide band gap of eV affords it special properties for applications in optoelectronic, high-power and high-frequency devices. For example, GaN is the substrate which makes violet ( nm) laser diodes possible, without use of nonlinear optical frequency-doubling.